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DSSC用钒掺杂二氧化钛薄膜的制备及性能表征
Preparation and Characterization of V- doped Titanium Dioxide Films used for Dye-sensitized Solar Cell
摘要点击 42  全文点击 22  投稿时间:2017-03-16  修订日期:2017-04-08
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DOI编号   
中文关键词   钒掺杂,TiO2薄膜,射频磁控溅射,DSSC电池,性能
英文关键词   V doping, TiO2 film, Radio-frequency (R.F.), Dye-Sensitized Solar Cells(DSSC), Performance
基金项目   攀枝花学院校级项目
作者单位E-mail
赖奇 攀枝花学院攀西科技创新中心 pzhlaiqi@163.com 
廖先杰 攀枝花学院攀西科技创新中心  
张树立 攀枝花学院攀西科技创新中心  
李俊翰 攀枝花学院攀西科技创新中心  
吴恩辉 攀枝花学院攀西科技创新中心  
钟璨宇 攀枝花学院攀西科技创新中心  
中文摘要
    为获得高性能电池用二氧化钛薄膜,采用射频磁控溅射法在靶材中掺入V2O5制备了TiO2薄膜,使用分光光度计和电化学工作站研究了溅射时间、退火温度和掺钒量等对TiO2薄膜光学性能和电学性能的影响。研究表明溅射时间对薄膜紫外光区的透射率影响较大,在小于400nm区域内,3h溅射薄膜的透射率已经降至60%以下;对薄膜可见光区的透射率影响较小,此区域内薄膜的平均透射率达80%以上。退火温度对薄膜的亲水性能和光催化性能有一定的影响,经400℃退火的薄膜具有很好的光催化性能和超亲水性。掺杂V2O5使薄膜的吸收峰红移和禁带宽度变窄,当掺杂量为0.5%时,TiO2薄膜红移量最大、禁带宽度变为2.88eV。随后将制备的掺钒二氧化钛薄膜制备成染料敏化太阳能电池(DSSC),结果表明掺V2O5 0.5%的二氧化钛薄膜的光响应范围增大,所制备电池的开路电压和短路电流都高于未掺杂电池,特别是短路电流从24.82μA增大到了88.15μA,提高了电池的综合性能。
英文摘要
    In order to obtain high-performance batteries with titanium dioxide films by RF magnetron sputtering, doped(V2O5) TiO2 films were prepared. The main factors affecting the time,the pressure ratio of argon and oxygen, and annealing temperature. The effects such as mass of doping (V2O5) and annealing temperature on film properties.722 spectrophotometer using the optical properties of the study by the degradation of methylene blue and drop contact angle method on the catalytic properties of thin films and hydrophilic properties were studied. The results showed that Doped (V2O5) red shift the absorption peak of the film and the band gap narrowing, of which 0.5% V2O5 doped TiO2 thin film of the red shifts of the largest band gap becomes 2.88eV; 400℃ annealed films with good photocatalytic properties and ultra-hydrophilic.The prepared thin films of titanium dioxide as DSSC cells of sputtering time, the doping effect on battery performance. it shows that Doped with 0.5% V2O5 thin film battery open circuit voltage and short circuit current is higher than the undoped cell, in particular, short-circuit current increases from 24.82A to 88.15A.

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