Study on Carrier Tuning between p- and n-Ba8Ga16Ge30 Single Crystals

Abstract:

Carrier-type conversion between p- and n-Ba8Ga16Ge30 (BGG) single crystals was realized. The temperature dependence of resistivity has been measured to judge the carrier types of the new batch samples synthesized using physical property measurement system (PPMS). The resistivity data show that p- and n-type BGG could be converted to each other under the addition of excessive components. This approach is instructive for tuning the charge carrier type or concentration to effectively investigate the vibration behavior of guest atoms and host cages. In addition, it can also provide some important information to the recycle of the thermoelectric materials.