The electronic energy properties of the doped GaAs/ GaAlAs fibonacci quantum wells structure

Abstract:

The eigen-wavefunction of the Fibonacci quantum well structure is presented based on an exact solution of the Schrodinger equation by using the transfer matrix approach and the boundary conditions. We consider the case where one of the potential well containing impurities for the Fibonacci quantum wells structure, and we think that the impurities merely changed the well width. For a selected range of parameters of semiconductor materials, the behavior of eigenenergy has been studied for the doped Fibonacci quantum well structure by changing the well width in the one of the potential well containing impurities.