Curve surface structure characteristics and forming mechanism of anode Ta/Ta2O5 film

Abstract:

Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism of tantalum anode section were studied by field emission scanning electron microscopy (SEM) and theoretical analysis. The results show that a gap layer (<1nm), caused by oxygen vacancy and its defect ion migration, is embedded in the Ta/Ta2O5 film curve surface. Moreover, surface film of the interface structure stress model shows that the defect concentration produced in the surface electrochemical growth process is higher than that of planar system. The mechanism of the electric field stress distortion shielding related to the formation process of the tantalum electrolytic capacitor film is discussed.