Study on the effects of the evolution of helium-related defects in tungsten under different annealing temperatures

Abstract:

In this paper, the helium ions with the energy of 100 keV were implanted into tungsten. The behavior of helium and evolution of the related defect under different annealing temperatures were studied by XRD and slow positron beam analysis (SPBA). The results showed that the defect type is not changed at lower annealing temperature, and the decline of S parameter manifested that the lower temperature annealing led the decrease of defect concentration. As the annealing temperature approaching to 700℃，the change of the linear distribution of S-W parameter indicated that the type of defect has been altered. While the further increment of annealing temperature, the evolution of helium-related defects is aggravated, and these defects migrate to deeper region in the tungsten samples.