优质高稳定性微晶硅薄膜的制备

Preparation of the high-quality and stable

摘要:

对以SiCl4和H2为源气体、采用等离子体增强化学气相沉积（PECVD）技术在低温快速沉积优质高稳定性的微晶硅薄膜进行了研究。在低于250℃下，成功制备出了沉积速率高达0.28nm/s、晶化度达80%以上的微晶硅薄膜。通过光照实验，表明该微晶硅薄膜光致电导率基本保持恒定；通过对气流分布进行调节，微晶硅薄膜的均匀性得到明显改善，均匀度高达95%。

Abstract:

High-quality microcrystalline silicon films with improved stability were prepared by plasma enhanced chemical vapour deposition technique from SiCl4/H2 under 250℃, at a higher rate over 0.28nm/s, with a crystalline fraction of 80%. The photoconductivity of the microcrystalline silicon films keeps a constance after 540min long light soaking. The thickness uniformity of films was markedly improved (more than 95%) by altering the distribution of pore.