空穴浓度和基底对金属基外延石墨烯态密度的影响

Effect of hole concentration, base and temperature on the density of metal - based epitaxial graphene

摘要:

以吸附在金属铜基底上的外延石墨烯为例， 研究了空穴浓度随温度的变化，探讨了空穴浓度和基底以及温度对金属基外延石墨烯态密度的影响。结果表明：(1)空穴浓度随温度升高而非线性增大，铜基底外延石墨烯的空穴浓度随温度的变化率小于石墨烯的相应值；(2)与石墨烯相比，基底的存在使铜基外延石墨烯的空穴浓度随温度的变化要迅速增大，态密度在电子能量为0时的值要增大，而态密度极大值相应的电子能量（称为最可几能量）变小；(3)铜基外延石墨烯的态密度随空穴浓度的增大和温度的升高而减小，其中，随空穴浓度的变化为线性，而随温度的变化为非线性。

Abstract:

This paper investigates the variation of hole concentration with temperature, then discussed the effect of hole concentration , base and temperature on the density of metal - based epitaxial graphene. The results were three fold. First, the hole concentration increases nonlinearly with the temperature increasing, and the rate of change of the hole concentration of the epitaxial graphene with the temperature is smaller than that of graphene. Second, Compared with graphene,When electron energy is zero, the density of states of copper-based epitaxial graphene is higher than that of graphene. Third, the maximum of graphene density decreases at the corresponding electron energy because of the substrate. The density of states of Cu-based epitaxial graphene decreases with the increase of hole concentration and temperature, with the change of the concentration of the hole is linear, but with the temperature change is nonlinear.