S4+离子3s2-3s3p和S5+离子3s-3p电子碰撞激发截面

Theoretical study on cross sections for electron impact excitation of S4+ (3s2-3s3p) and S5+ (3s-3p)

摘要:

利用全相对论扭曲波电子碰撞激发计算程序REIE06，系统计算了阈值附近不同入射电子能量下S4+离子基态3s2 1S0到激发态3s3p 3P0,1,2 1P1和S5+离子基态3s 2S1/2到激发态3p 2P1/2 2P2/3精细结构能级的碰撞截面，在两种关联模型下，分析了组态相互作用对碰撞截面的影响. 目前的计算结果与Wallbank实验值[14]相比，得到很好的一致性.

Abstract:

The electron impact excitation (EIE) cross sections of S4+ ion from the ground state 3s2 1S0 to all of excited states 3s3p 3P0,1,2 1P1 , and S5+ ion from the ground state 3s 2S1/2 to all of excited states 3p 2P1/2 2P2/3 are calculated for energies of the near-threshold by using the fully relativistic distorted-wave program REIE06. The electron correlation effects for EIE cross sections are studied, and some important conclusions are summarized. An agreement is found when the present calculated results are consistent with the experimental values given by Wallbank et al. [14].